| 摘要 |
The present invention relates to a light emitting diode which has a tunneling prevention layer interposed between adjacent active regions. The tunneling prevention layer functions as a semiconductor layer where electrons and holes cannot move under an applied voltage enough to activate any one of all active regions. The tunneling prevention layer separates independently two adjacent active regions in the range of a quantum region. The light emitting device includes a plurality of independent active regions in a vertical direction in a single chip. So, high voltage driving can be carried out. |
