Body-tied, strained-channel multi-gate device and methods of manufacturing same

摘要

A fin-FET or other multi-gate transistor is disclosed. The transistor comprises a semiconductor substrate having a first lattice constant, and a semiconductor fin extending from the semiconductor substrate. The fin has a second lattice constant, different from the first lattice constant, and a top surface and two opposed side surfaces. The transistor also includes a gate dielectric covering at least a portion of the top surface and the two opposed side surfaces, and a gate electrode covering at least a portion of the gate dielectric. The resulting channel has a strain induced therein by the lattice mismatch between the fin and the substrate. This strain can be tuned by selection of the respective materials.

主权项

1. A method comprising:
epitaxially growing on a substrate having a first lattice constant, a fin having a second lattice constant, different than the first lattice constant; and epitaxially growing a cap layer on the fin, the cap layer having the first lattice constant.