Suspended ring-shaped nanowire structure

摘要

A mandrel having vertical planar surfaces is formed on a single crystalline semiconductor layer. An epitaxial semiconductor layer is formed on the single crystalline semiconductor layer by selective epitaxy. A first spacer is formed around an upper portion of the mandrel. The epitaxial semiconductor layer is vertically recessed employing the first spacers as an etch mask. A second spacer is formed on sidewalls of the first spacer and vertical portions of the epitaxial semiconductor layer. Horizontal bottom portions of the epitaxial semiconductor layer are etched from underneath the vertical portions of the epitaxial semiconductor layer to form a suspended ring-shaped semiconductor fin that is attached to the mandrel. A center portion of the mandrel is etched employing a patterned mask layer that covers two end portions of the mandrel. A suspended semiconductor fin is provided, which is suspended by a pair of support structures.

主权项

1. A semiconductor structure comprising:
a pair of support structures located on a substrate semiconductor layer; and a ring-shaped semiconductor nanowire vertically spaced from said substrate semiconductor layer and laterally extending around and contacting outer sidewall surfaces of each of said support structures, wherein two portions of said ring-shaped semiconductor nanowire do not contact said pair of support structures.