Structure and method for FinFET device

摘要

A method for fabricating a fin-type field-effect transistor (FinFET) device includes forming a first fin structure over a substrate, forming a dielectric layer over the first fin structures, forming a trench with a vertical profile in the dielectric layer, depositing conformably a first semiconductor material layer over sidewalls and bottom of the trench, depositing a second semiconductor material layer over the first semiconductor material layer to filling in the remaining trench, recessing the dielectric layer to laterally expose the first semiconductor material layer and etching the exposed first semiconductor material layer to reveal the second semiconductor material layer.

主权项

1. A method for fabricating a fin-type field-effect transistor (FinFET) device, the method comprising:
forming a first fin structure over a substrate; forming a dielectric layer over the first fin structure; forming a trench within the dielectric layer, wherein the first fin structure is exposed in a bottom of the trench; depositing a first semiconductor material layer within the trench; depositing a second semiconductor material layer over the first semiconductor material layer within the trench; recessing the dielectric layer to laterally expose the first semiconductor material layer; and etching the exposed first semiconductor material layer to reveal the second semiconductor material layer, wherein at least a portion of the first semiconductor material layer underneath the second semiconductor material layer remains intact.