| 摘要 |
PURPOSE:To obtain the semiconductor light-emitting element with multiple wavelengths, which is easy to couple with one fiber, by forming a P-N junction in two or more depth, which are parallel with the surface of a primary crystal, of one epitaxial growth layer, an energy gap thereof changes monotonously. CONSTITUTION:The P-N junction is shaped in two or more depth, which are parallel with the surface of the primary crystal, of one epitaxial growth layer, the energy gap thereof changes monotonously. N-GaAlAs 1 is grown on a substrate in an epitaxial shape, and the substrate is etched and the half of the growth layer 1 up to the surface d1. The P-GaAlAs layer 2 is grown on the surfaces d1, d2. Accordingly, the semiconductor light-emitting element with multiple wavelengths, which is easy to couple with one fiber, can be obtained. |
