发明名称 Method for the deposition and modification of thin films using a combination of vacuum arcs and plasma immersion ion implantation
摘要 Cathodic/anodic vacuum arc sources with plasma ion implantation deposition system for depositing high quality thin film coatings of complex compounds on a workpiece. Both cathodic and anodic vacuum arc deposition sources, CAVAD, are used to create a plasma vapor from solid materials composing the cathode and/or anode in the cathodic and/or anodic arc respectively. Gases, e.g., hydrogen or nitrogen can be in the deposited films by creating a background plasma of the desired gas using either RF energy, thermionic emission, or consequential ionization of the gas passing through the arc or around the substrate. Application of highly negative pulses to the substrate to extract the ions and provide them with the appropriate energy to interact with the other species in the thin film formation on the substrate to form the desired films. The substrate is bombarded with the ionized particles to form carbon nitrides with variable [N]/[C] ratios, referred to as CNx.
申请公布号 US5580429(A) 申请公布日期 1996.12.03
申请号 US19950475002 申请日期 1995.06.07
申请人 NORTHEASTERN UNIVERSITY 发明人 CHAN, CHUNG;ALLEN, RYNE C.;HUSEIN, IMAD;ZHOU, YAUNZHONG
分类号 C23C14/32;H01J37/32;(IPC1-7):C23C14/32 主分类号 C23C14/32
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