发明名称 |
Semiconductor memory and method for driving the same |
摘要 |
A semiconductor memory includes a storing transistor for storing a data composed of any of an MFS transistor, an MFIS transistor and an MFMIS transistor, and a selecting transistor for selecting the storing transistor. A first well region of a first field effect transistor included in the storing transistor is isolated from a second well region of a second field effect transistor included in the selecting transistor. The semiconductor memory further includes a first voltage supply line for supplying a DC voltage to the first well region of the first field effect transistor, and a second voltage supply line independent of the first voltage supply line for supplying a DC voltage to the second well region of the second field effect transistor.
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申请公布号 |
US2002001220(A1) |
申请公布日期 |
2002.01.03 |
申请号 |
US20010886995 |
申请日期 |
2001.06.25 |
申请人 |
KATO YOSHIHISA;SHIMADA YASUHIRO |
发明人 |
KATO YOSHIHISA;SHIMADA YASUHIRO |
分类号 |
G11C11/22;H01L21/8246;H01L27/105;H01L27/115;(IPC1-7):G11C11/22 |
主分类号 |
G11C11/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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