发明名称 Semiconductor memory and method for driving the same
摘要 A semiconductor memory includes a storing transistor for storing a data composed of any of an MFS transistor, an MFIS transistor and an MFMIS transistor, and a selecting transistor for selecting the storing transistor. A first well region of a first field effect transistor included in the storing transistor is isolated from a second well region of a second field effect transistor included in the selecting transistor. The semiconductor memory further includes a first voltage supply line for supplying a DC voltage to the first well region of the first field effect transistor, and a second voltage supply line independent of the first voltage supply line for supplying a DC voltage to the second well region of the second field effect transistor.
申请公布号 US2002001220(A1) 申请公布日期 2002.01.03
申请号 US20010886995 申请日期 2001.06.25
申请人 KATO YOSHIHISA;SHIMADA YASUHIRO 发明人 KATO YOSHIHISA;SHIMADA YASUHIRO
分类号 G11C11/22;H01L21/8246;H01L27/105;H01L27/115;(IPC1-7):G11C11/22 主分类号 G11C11/22
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