发明名称 |
TUNABLE STRUCTURE UTILIZING A COMPLIANT SUBSTRATE |
摘要 |
A highly tunable structure (20) can be monolithically integrated upon a monocrystalline semiconductor substrate (22) according to the structure and process described herein. High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates (22) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An amorphous interface layer (28) dissipates strain and permits the growth of a high quality monocrystalline buffer layer (24). In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy (61) and epitaxial growth of Zintl phase materials (130). |
申请公布号 |
WO02056417(A2) |
申请公布日期 |
2002.07.18 |
申请号 |
WO2001US46906 |
申请日期 |
2001.12.06 |
申请人 |
MOTOROLA, INC. |
发明人 |
EISENBEISER, KURT, W.;EL-ZEIN, NADA, A.;PRENDERGAST, E., JAMES |
分类号 |
C30B25/18;H01Q1/38;H01Q3/44 |
主分类号 |
C30B25/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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