发明名称 |
Nonvolatile memory system, method of operating the same and method of manufacturing the same |
摘要 |
An operating method of a nonvolatile memory system including first and second areas is provided. Data stored in the first area is migrated to the second area when a first booting operation is performed. The data stored in the second area is reprogrammed. The first booting operation is a booting operation performed when the nonvolatile memory system is first powered on after mounted on a printed circuit board. The reprogramming is a program operation performed on the data stored in the second area without performing an erasing operation on the data stored in the second area. |
申请公布号 |
US9424933(B2) |
申请公布日期 |
2016.08.23 |
申请号 |
US201414569174 |
申请日期 |
2014.12.12 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
Choi In-Hwan;Yoon Songho |
分类号 |
G11C16/22;G06F12/02;G06F12/14;G11C16/10;G11C11/56;G11C16/26;G11C16/34;G11C16/20;G11C7/24;G06F3/06 |
主分类号 |
G11C16/22 |
代理机构 |
F. Chau & Associates, LLC |
代理人 |
F. Chau & Associates, LLC |
主权项 |
1. An operating method of a nonvolatile memory system including first and second areas comprising:
storing data in the first area; migrating data stored in the first area to the second area in a first booting operation; and reprogramming the data stored in the second area, wherein the first booting operation is performed upon the nonvolatile memory system being first powered on after mounted on a printed circuit board, and wherein the reprogramming is a program operation performed on the data stored in the second area without performing an erasing operation on the data stored in the second area. |
地址 |
Suwon-Si, Gyeonggi-Do KR |