发明名称 Nonvolatile memory system, method of operating the same and method of manufacturing the same
摘要 An operating method of a nonvolatile memory system including first and second areas is provided. Data stored in the first area is migrated to the second area when a first booting operation is performed. The data stored in the second area is reprogrammed. The first booting operation is a booting operation performed when the nonvolatile memory system is first powered on after mounted on a printed circuit board. The reprogramming is a program operation performed on the data stored in the second area without performing an erasing operation on the data stored in the second area.
申请公布号 US9424933(B2) 申请公布日期 2016.08.23
申请号 US201414569174 申请日期 2014.12.12
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 Choi In-Hwan;Yoon Songho
分类号 G11C16/22;G06F12/02;G06F12/14;G11C16/10;G11C11/56;G11C16/26;G11C16/34;G11C16/20;G11C7/24;G06F3/06 主分类号 G11C16/22
代理机构 F. Chau & Associates, LLC 代理人 F. Chau & Associates, LLC
主权项 1. An operating method of a nonvolatile memory system including first and second areas comprising: storing data in the first area; migrating data stored in the first area to the second area in a first booting operation; and reprogramming the data stored in the second area, wherein the first booting operation is performed upon the nonvolatile memory system being first powered on after mounted on a printed circuit board, and wherein the reprogramming is a program operation performed on the data stored in the second area without performing an erasing operation on the data stored in the second area.
地址 Suwon-Si, Gyeonggi-Do KR
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