FORMATION OF DIELECTRIC THIN FILM PATTERN AND LAMINATE PATTERN

摘要

PROBLEM TO BE SOLVED: To form a low loss dielectric thin film by normal temperature deposition and lift-off method. SOLUTION: After a specified resist pattern 2 is formed on a substrate 1, a conductor (Cu) thin film 4 is deposited under normal temperature on a substrate 1 from above a resist pattern 2 at a substrate temperature of 150 deg.C or below followed by normal temperature deposition of a dielectric thin film 5 of any one of CeO2, Sm2O3, Dy2O3, Y2O3, TiO2, Al2O3 or MgO on the underlying conductor thin film 4 at the substrate temperature of 150 deg.C or below. A conductor (Cu) thin film 6 is further deposited on the dielectric thin film 5 under normal temperature at the substrate temperature of 150 deg.C or below and then the conductor thin films 4, 6 and the dielectric thin film 5 are stripped along with the resist pattern 2 to form a wiring pattern 7 lift-off method.