| 摘要 |
PURPOSE: An erase method of a semiconductor memory device is provided to erase sectors sequentially in case that sectors performing an erase operation is more than sectors to be selected by an address, and to make it easy to realize a logic according to an address coding by separating a coding system of a sector designation address used in the program operation and the erase operation. CONSTITUTION: If an erase operation begins, a 1-bit dummy address signal(DA19) and 4-bit address signals(A15-A18) to assign sectors to be erased sequentially are loaded into a flash memory device. Next, the loaded address bit signals are set to "0" for the first sector(SA0) to be selected. And, it is inspected whether address bit signals(A15-A18,DA19) to assign the first sector are latched or not. If the address bit signals are not latched, the inspection is repeated. On the contrary, if the address bit signals are latched, the erase operation of the selected sector is performed. Next, it is judged whether the amaunt of the erased sectors are more than the amaunt of the sectors to be erased or not. If the erased sectors are more than the sectors to be erased, the erase operation ends. If not, repeats all steps after the operation of loading an address signal.
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