| 摘要 |
PROBLEM TO BE SOLVED: To suppress cracks caused in an interlayer insulating film composed of a low dielectric film between wirings in an inspection using a probe needle at a high temperature in a semiconductor device having an electrode pad. SOLUTION: After a titanium layer 8 serving as a barrier layer and a nickel layer 9 serving as a closely adhered layer are formed on an electrode pad 2 by sputtering, a low melting point alloy 10 to be melted at an inspection temperature or below is formed by sputtering, and the surface of the low melting point alloy 10 is lower than the surface of a protection film 11. The low melting point alloy 10 is melted at the probe inspection at a high temperature, so that, if a large load is not applied to a probe needle 1, an electric conduction can be stably obtained relative to the low melting point alloy 10, and a large stress is not applied to the electrode pad 2. COPYRIGHT: (C)2005,JPO&NCIPI |
