| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which can effectively form a recess channel structure having a profile with a large radius of curvature. SOLUTION: A hard mask layer pattern for demarcating a recess region is formed on a semiconductor substrate 310, a recess channel structure 340 is formed by selectively etching the semiconductor substrate with the hard mask layer pattern serving as an etching mask, the hard mask layer pattern is removed to expose the semiconductor substrate 310 including the recess channel structure 340, and a gate electrode 364 is formed so as to fill the recess channel structure. The selective etching step is performed by a two-step plasma etching method of first anisotropic etching and second isotropic etching having different etching conditions. COPYRIGHT: (C)2008,JPO&INPIT
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