| 发明名称 |
MAGNETORESISTANT DEVICE AND A MAGNETIC SENSOR COMPRISING THE SAME |
| 摘要 |
A magnetoresistant device having a structure in which magnetic layers and nonmagnetic layers made mainly of Cu are provided alternately and in which the thickness of the nonmagnetic layers is approximately the value where the MR ratio takes on a second maximum. The magnetic layers are made of Co1-xFex (0.05 </= x </= 0.5) and have different thicknesses. The thicknesses of thinner magnetic layers range from 4.5 to 8 angstroms. Another mode of magnetoresistant device to which a magnetic field whose central field is offset in a certain direction is applied is initialized beforehand in the direction of the offset magnetic field. The magnetoresistant film is patterned linearly so that the longitudinal direction of the linear film is perpendicular to the direction in which the magnetic field to be detected changes. The magnetoresistant device with such a construction has a high rate of change of magnetoresistance and a small hysteresis magnetic field both appropriate for a magnetic sensor, and is stable at high temperature.
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| 申请公布号 |
WO0025371(A1) |
申请公布日期 |
2000.05.04 |
| 申请号 |
WO1998JP04840 |
申请日期 |
1998.10.26 |
| 申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA;FUKAMI, TATSUYA;MAEDA, YOSHINOBU |
发明人 |
FUKAMI, TATSUYA;MAEDA, YOSHINOBU |
| 分类号 |
G01R33/09;H01L43/08;(IPC1-7):H01L43/08;G11B5/39 |
主分类号 |
G01R33/09 |
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