| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma treatment device capable of controlling a self-bias potential of an electrode without using any high frequency power source which is expensive and occupies a space. SOLUTION: A cathode 3, an anode 4 and a ring electrode 5 are arranged in such a manner as to expose to the inside of a reactor chamber 2. In the state in which treatment gas is introduced into the reactor chamber 2, high frequency electric power is applied between the cathode 3 and the ring electrode 5, and the anode 4, thereby generating plasma inside the reactor chamber 2. A plasma CVD treatment device subjects the surface of a substrate W placed on the anode 4 to a predetermined process by using the resultant plasma. High frequency oscillators 21, 23 for applying high frequency electric power are connected to the cathode 3 and the ring electrode 5, respectively. Furthermore, a matching circuit 30 consisting of a coil and a capacitor for varying the impedance of the anode 4 to thus control a self-bias potential of the anode 4 is connected to the anode 4. |
