| 摘要 |
PROBLEM TO BE SOLVED: To accurately manufacture a semiconductor device having a short gate length. SOLUTION: By utilizing the fact that a pattern-preparing film 34a on the sidewall of an opening 32 is fragile, as compared to the pattern-preparing film 34a on an anneal-protecting film 24, a second patterning layer 38 that covers a region 30 is formed, while forming a trough 36 to contact a first patterning layer 26. By removing a part of the trough 36 by etching, the first patterning layer 26 and the second patterning layer 38 can be separated by a gate length Lg. As a consequence, the gate length Lg can be controlled accurately.
|
