发明名称 Apparatus and method for use in manufacturing a semiconductor device
摘要 An apparatus for use in manufacturing a semiconductor device allows one or more substrates treated substantially free of the metal particles released from the chamber wall and the high energy particles emitted from the plasma and also allows them to uniformly heated to a relatively high temperature. The apparatus comprises a reaction chamber wherein one or more substrates to be treated are disposed, a plasma source arranged outside of and in proximity to the reaction chamber, an active species supply port for providing active species generated by the plasma source to the reaction chamber and arranged at a side of the reaction chamber and an exhaust port provided at the opposite side to the active species supply port. The active species flows parallel to the surfaces of the substrates.
申请公布号 US7033937(B2) 申请公布日期 2006.04.25
申请号 US20030342011 申请日期 2003.01.14
申请人 HITACHI KOKUSAI ELECTRIC, INC. 发明人 TOYODA KAZUYUKI;KASAHARA OSAMU;TANAKA TSUTOMU;SUEYOSHI MAMORU;SHIMA NOBUHITO;SAKAI MASANORI
分类号 H01L21/44;H05H1/46;C23C16/44;C23C16/452;C23C16/455;C23C16/507;C23C16/511;C23C16/56;H01J37/32;H01L21/00;H01L21/02;H01L21/31;H01L21/316 主分类号 H01L21/44
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