ELECTROLYTE, METHOD OF FORMING A COPPER LAYER AND METHOD OF FORMING A CHIP

摘要

An electrolyte may be provided. The electrolyte may include at least one additive configured to decompose or evaporate at a temperature above approximately 100° C., and a water soluble metal salt, and the electrolyte may be free from carbon nanotubes. In various embodiments, a method of forming a metal layer may be provided: The method may include depositing a metal layer on a carrier using an electrolyte, wherein the electrolyte may include at least one additive configured to decompose or evaporate at a temperature above approximately 100° C. and a water soluble metal salt, wherein the electrolyte is free from carbon nanotubes; and annealing the metal layer to form a metal layer comprising a plurality of pores. In various embodiments, a semiconductor device may be provided. The semiconductor device may include a metal layer including a plurality of pores, wherein the plurality of pores may be formed in the metal layer as remnants of an additive having resided in the plurality of pores and having at least partially decomposed or evaporated. To keep a high elasticity over a wide temperature range (up to 450° C.), an adhesion layer may stabilize the metal grain boundaries and may fix dislocation gliding inside metal grains. In various embodiments, a metal layer is provided. The metal layer may include a plurality of pores having ellipsoidal or spheroidal shape.

主权项

1. An electrolyte for electrodepositing a metal layer, comprising:
at least one additive configured to be embedded in the metal layer, to decompose or evaporate at a temperature above approximately 100° C., and to thereby form pores in the metal layer; and a water-soluble metal salt, wherein metal ions of the metal salt are configured to be deposited as the metal layer; wherein the electrolyte is free from carbon nanotubes.