A memory device is disclosed. A semiconductor device comprises: a semiconductor substrate including a circuit region and a connection region arranged on one side of the circuit region; a logic structure including a logic circuit arranged in the circuit region, and a lower insulation film covering the logic circuit; a memory structure on the logic structure; and a stress reducing structure between the logic structure and the memory structure in the circuit region. Therefore, degradation of features of the logic structure can be reduced.
申请公布号
KR20160070245(A)
申请公布日期
2016.06.20
申请号
KR20140175816
申请日期
2014.12.09
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
LIM, JOON SUNG;YUN, JANG GN;BAE, SUNG HOON;YUN, JAE SUN;CHANG, KYU BAIK