SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

Provided is a silicon carbide semiconductor device that enables integration of a transistor element and a Schottky barrier diode while avoiding the reduction of an active region. A silicon carbide semiconductor device includes a silicon carbide layer, a gate insulating film, a Schottky electrode being Schottky functioned to a drift layer via a first contact hole and an opening, a gate electrode being arranged on the gate insulating film, an insulating layer being arranged so as to cover the gate insulating film, the gate electrode, and the Schottky electrode and having a second contact hole for exposing the gate electrode, and a gate pad electrode being arranged on the insulating layer so as to overlap the Schottky electrode in a plan view and being electrically connected to the gate electrode via the second contact hole.

主权项

1. A silicon carbide semiconductor device comprising:
a silicon carbide layer having a first main surface and a second main surface located on a side opposite to the first main surface, the silicon carbide layer including: a drift layer having a first conductivity type and defining the first main surface of the silicon carbide layer; and a body region being provided on the drift layer, having a second conductivity type different from the first conductivity type, and being provided with at least one opening for exposing the drift layer, the silicon carbide semiconductor device including: a gate insulating film being arranged on the first main surface of the silicon carbide layer and having a first contact hole for exposing the first main surface on the opening; a Schottky electrode being Schottky functioned to the drift layer via the first contact hole and the opening; a gate electrode being arranged on the gate insulating film; an insulating layer being arranged so as to cover the gate insulating film, the gate electrode, and the Schottky electrode and having a second contact hole for exposing the gate electrode; and a gate pad electrode being arranged on the insulating layer so as to overlap the Schottky electrode in a plan view and electrically connected to the gate electrode via the second contact hole.