发明名称 Electronic component package and method for forming same
摘要 An electronic component package includes a substrate and dielectric structure. The dielectric structure includes a top surface having a protrusion portion and a lower portion. The protrusion portion is located at first height that is greater than a second height of the lower portion. A conductive bond pad is located over the dielectric structure. A ball bond electrically couples the bond pad and a bond wire. An intermetallic compound located between the ball bond and bond pad is formed of material of the ball bond and bond pad and electrically couples the bond pad to the ball bond. A portion of the bond pad is vertically located between a portion of the lower portion of the top surface of the dielectric structure and the intermetallic compound. No portion of the bond pad is vertically located between at least a portion of the protrusion portion and the intermetallic compound.
申请公布号 US9437574(B2) 申请公布日期 2016.09.06
申请号 US201314042662 申请日期 2013.09.30
申请人 Freescale Semiconductor, Inc. 发明人 Tran Tu-Anh N.;Lee Chu-Chung
分类号 H05K1/11;H05K1/09;H01L23/00 主分类号 H05K1/11
代理机构 代理人
主权项 1. An electronic component package comprising: a substrate; a dielectric structure, the dielectric structure including a top surface, the top surface including a protrusion portion and a lower portion, the protrusion portion being located at first height with respect to the substrate that is greater than a second height of the lower portion with respect to the substrate; a conductive bond pad located over the dielectric structure; a bond wire; a ball bond electrically coupling the bond pad and the bond wire; an intermetallic compound located between the ball bond and the bond pad and formed of material of the ball bond and the bond pad, the intermetallic compound electrically coupling the bond pad to the ball bond, where a portion of the bond pad is vertically located with respect to the substrate between a portion of the lower portion of the top surface of the dielectric structure and the intermetallic compound, wherein for at least a portion of the protrusion portion, no portion of the bond pad is vertically located between the at least a portion of the protrusion portion and the intermetallic compound and the protrusion portion is located directly under the ball bond.
地址 Austin TX US