TSV without zero alignment marks

摘要

Semiconductor device and method of forming a semiconductor device are disclosed. The method includes providing a substrate. A dielectric layer is formed on the substrate. The dielectric layer includes an upper and lower level. The upper level of the dielectric layer is patterned to form at least first and second trench openings and alignment mark openings. One of the first and second trench openings serve as a through via (TV) trench while another trench opening serves as an interconnect trench. A TV opening aligned to the TV trench is formed. The TV opening extends partially into the substrate. A conductive layer is formed over the substrate to fill the trenches and the openings.

主权项

1. A method of forming a device comprising:
providing a substrate; forming a dielectric layer disposed on the substrate, the dielectric layer serves as an intermetal dielectric (IMD) layer which comprises an upper and lower portion, wherein the upper portion of the dielectric layer corresponds to a first metal level and the lower portion of the dielectric layer corresponds to a premetal dielectric (PMD) level; patterning the upper portion of the dielectric layer to form at least first and second trench openings and alignment mark openings, wherein one of the first and second trench openings serve as a through via (TV) trench while another trench opening serves as an interconnect trench, and wherein the PMD level separates the first and second trench openings and alignment mark openings in the first metal level from the substrate; forming a TV opening aligned to the TV trench, wherein the TV opening extends through the PMD level and partially into the substrate; and forming a conductive layer over the substrate to fill the trenches and the openings.