| 摘要 |
PURPOSE:To enhance the response capability of infrared ray element, by constituting the contact surface of the electrodes fromed at both ends of an insulator layer and an infrared ray detecting element in a non-ohmic contact structure. CONSTITUTION:A wafer for infrared ray detecting element 42 is made to contact on an insulator substrate 41, and a layer 43 of light transmitting insulating material is formed in the position other than the electrode forming region of the detecting element by vapor deposition with the aid of metal mask or the like. After covering the layer 43 with photo rsist film or the like, electrode forming region B of the infrared ray element is etched until high resistance layer is exposed in an etching solution prepared by diluting bromine solution in methyl alcohol. A metal such as In is evaporated on thus etched detecting element in part of the substrate and electrode forming region, except for light receiving surface C, with the aid of metal mask to form an electrode 44. Thus formed element and electrode are bonded by non-ohmic contact. Accordingly, the number of few carriers increases in the element, so that the response capability of the element to the infrared ray may be improved. |
