发明名称 Construction for cooling of a RF power transistor
摘要 <p>The invention relates to a cooling construction for cooling a power transistor (4) having a plastic encapsulation, wherein the waste heat produced is conducted away mainly via the collector lead (6), the collector lead being connected to the collector strip (3) on the circuit board. When it is desired to conduct the produced waste heat specifically on the component side of the circuit board (1), it is possible to use a construction according to the invention in which there is placed on the circuit board (1) a highly heat conductive insulation plate (8) which covers the collector strip (3) entirely over part of its length next to the transistor (4), and that to the insulation plate (8) there is fixed a cooling plate (9) to which the thermal energy produced in the transistor is conducted. The insulation plate (8) may in part also extend on top of the plastic encapsulation of the transistor. <IMAGE></p>
申请公布号 EP0449435(B1) 申请公布日期 1995.12.20
申请号 EP19910301800 申请日期 1991.03.05
申请人 NOKIA MOBILE PHONES LTD. 发明人 PESOLA, MIKKO
分类号 H01L23/36;H01L23/373;H05K1/02;(IPC1-7):H01L23/36;H01L23/367 主分类号 H01L23/36
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