| 摘要 |
PROBLEM TO BE SOLVED: To reduce the operational voltage while increasing the light emitting intensity of a pn junctioned light emitting diode using silicon carbide. SOLUTION: A compound electrode comprising an Ni made ohmic electrode and an auxiliary electrode made of a metal out of Al, Ag and Pt in electrical contact with the ohmic electrode 2 is provided on an n type silicon carbide substrate backside 3 having the areal ratio of 5-20% to the main surface of the substrate. In such a constitution, further reduction in the operational voltage and the increase in the light emitting intensity can be attained, thereby enabling a blue color light emitting diode in high reliability and brightness to be realized. |
