SILICON WAFER AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A silicon wafer which is fabricated from a single crystal silicon ingot grown up by Czochralski process and used in fabricating semiconductor devices such as LSI (large scale integrated circuit) is provided, and a method for fabricating the silicon wafer is provided. CONSTITUTION: The method for fabricating a silicon wafer comprises first cleaning process of cleaning polycrystalline silicon in a bulk or particle phase with a dissolved aqueous ozone solution; second cleaning process of cleaning the polycrystalline silicon cleaned in the first cleaning process with hydrofluoric acid or a mixed acid of hydrofluoric acid and nitric acid; rinsing process of rinsing the polycrystalline silicon cleaned in the second process with ultra pure water; pulling up process of melting the rinsed polycrystalline silicon, and pulling up a single crystal silicon ingot from the silicon molten solution at a solidification ratio of 0.9 or less; single crystal silicon manufacturing process of manufacturing the pulled up single crystal silicon ingot into bulk or particle phase single crystal silicon; third cleaning process of cleaning the bulk or particle phase single crystal silicon with a dissolved aqueous ozone solution; fourth cleaning process of cleaning the single crystal silicon cleaned in the third cleaning process with hydrofluoric acid or a mixed acid of hydrofluoric acid and nitric acid; rinsing process of rinsing the single crystal silicon cleaned in the fourth cleaning process with ultra pure water; pulling up process of melting the rinsed single crystal silicon again, and pulling up the single crystal silicon ingot again at a solidification ratio of 0.9 or less by controlling pulling up speed and temperature gradient from the molten silicon solution so that a ratio of pulling up speed to temperature gradient of the single crystal silicon ingot is from (V/G)1 to (V/G)2; and fabricating a silicon wafer from the single crystal silicon ingot.