PHOTORESIST POLYMERS, PHOTORESIST COMPOSITIONS, METHODS OF FORMING PATTERNS AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES

摘要

The present invention relates to a polymer for photoresist, a photoresist composition, a method for forming patterns, and a method for manufacturing a semiconductor device. The polymer for photoresist comprises: a first repetitive unit including a fluorine leaving group capable of being removed by a photochemical reaction; and a second repetitive unit including a leaving group containing silicon removed by the fluorine leaving group. An exposing process or a photo process of high resolution can be implemented through an elimination reaction induced by the photochemical reaction.