COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To achieve a high breakdown voltage compound semiconductor device which successfully inhibits both of current collapse and gate leakage current by a comparatively simple composition to achieve high reliability.SOLUTION: An AlGaN/GaN HEMT includes an electron transit layer 2b, an electron supply layer 2c formed on the electron transit layer 2b and a GaN cap layer 2d formed on the electron supply layer 2c. The electron supply layer 2c has a first layer which is an i-type AlGaN(0