| 摘要 |
<p>PURPOSE: To prevent radio wave leakage and a short circuit from occurring between a gate electrode and a source electrode so as to improve a thin film transistor in characteristics by a method wherein an amorphous silicon layer is formed on an SiOX insulating layer of double structure, and an SiN film is formed inside the amorphous silicon layer. CONSTITUTION: An SiNO layer 9 is formed on a glass substrate 1 where ITO is deposited, and the SiNO layer 9 is coated with an SiOX film 10. ITO and Cr are deposited on the film 10, and a gate electrode 2 and an ITO picture element 11 are patterned, and an SiOX insulating layer 3 is formed for insulating the gate electrode 2 and a source electrode 7. The layer 3 is of two-layered structure composed of insulating layers 3a and 3b. An SiN film 5 is formed between the amorphous silicon layers 4a and 4b formed on the layer 3 so as to prevent a leakage current from occurring in a semiconductor film between the electrodes 2 and 7, and an N<+> -type amorphous silicon layer 6 which serves as a resistive layer and Al metal electrodes 7 and 12 are formed on the layer 5 by deposition.</p> |
