DOPING IN EPITAXIAL CRYSTAL GROWTH PROCESS,申请号JP19890299410-传众专利搜索

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发明名称	DOPING IN EPITAXIAL CRYSTAL GROWTH PROCESS
摘要
申请公布号	JPH03159995(A)	申请公布日期	1991.07.09
申请号	JP19890299410	申请日期	1989.11.16
申请人	RES DEV CORP OF JAPAN;NISHIZAWA JUNICHI;KURABAYASHI TORU;HAMANO TOMOYUKI;KIKUCHI HIDEYUKI	发明人	NISHIZAWA JUNICHI;KURABAYASHI TORU;HAMANO TOMOYUKI;KIKUCHI HIDEYUKI
分类号	C30B25/16;C30B25/02;H01L21/205	主分类号	C30B25/16
代理机构		代理人
主权项
地址

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