发明名称 |
Thin film transistors |
摘要 |
A method of forming an active plate for a liquid crystal display includes depositing and patterning a gate conductor layer over an insulating substrate; depositing a gate insulator layer over the patterned gate conductor layer; depositing a silicon layer over the gate insulator layer; depositing arid patterning a source and drain conductor layer over the silicon layer; and forming a pixel electrode layer for contacting one of the source and drain of the transistor. The silicon layer includes plasma deposition from a gas comprising at least a compound including an n-type dopant atom and a gas containing silicon, with the ratio of the volume of the compound to the volume of the gas containing silicon being selected to give a doping density of the n-type dopant atoms in the silicon layer of between 2.5x10<16 >and 1.5x10<18 >atoms per cm<3>.
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申请公布号 |
US6858477(B2) |
申请公布日期 |
2005.02.22 |
申请号 |
US20030347570 |
申请日期 |
2003.01.17 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
DEANE STEVEN C.;FRENCH IAN D. |
分类号 |
G02F1/1368;H01L21/336;H01L29/417;H01L29/786;(IPC1-7):H01L21/00 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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