| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a group III nitride compound semiconductor layer having stably excellent crystallinity by utilizing a sputtering method as a technique capable of acquiring a crystal film having satisfactory uniformity in a short time in making the group III nitride compound semiconductor layer. <P>SOLUTION: A forming method of the group III nitride compound semiconductor laminate structure includes a step of forming a multi-layer film structure consisting of a group III nitride compound semiconductor on a substrate. In this method, the multi-layer film structure includes at least a buffer layer and a base layer from the substrate side, which are laminated by a sputtering method, and the buffer layer has a film thickness of 5 nm-500 nm. <P>COPYRIGHT: (C)2008,JPO&INPIT |
