发明名称 |
Semiconductor device and method for isolating the same |
摘要 |
The present invention relates to a semiconductor device and a method for isolating the same. The semiconductor device includes: a silicon substrate provided with a trench including at least one silicon pillar at a bottom portion of the trench, wherein the silicon pillar become sidewalls of micro trenches; and a device isolation layer selectively and partially filled into the plurality of micro trenches.
|
申请公布号 |
US7579255(B2) |
申请公布日期 |
2009.08.25 |
申请号 |
US20040879757 |
申请日期 |
2004.06.30 |
申请人 |
HYNIX SEMICONDUCTOR, INC. |
发明人 |
PYI SEUNG-HO |
分类号 |
H01L21/76;H01L21/762;H01L21/764 |
主分类号 |
H01L21/76 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|