Impatt-Diode

摘要

A high resistance semiconductor epitaxial layer of opposite conductivity type is provided on a lower resistance semiconductor substrate of one conductivity type. A first diffusion layer of the one conductivity type and of cylindrical configuration extends through the epitaxial layer from the substrate in a limited area. A second diffusion layer of the opposite conductivity type and of disc-like configuration extends from the outer surface of the first diffusion layer a limited distance into the first diffusion layer in a manner whereby the junction between the first and second diffusion layers is planar and is embedded in the diode and has a breakdown voltage which is lower than that of the junction between the substrate and the epitaxial layer. Avalanche breakdown occurs substantially at the junction between the first and second diffusion layers.