| 摘要 |
PURPOSE:To control and conduct a switch provided between an arithmetic gate electrode and a voltage supply means in accordance with a desired operation, by forming a well of potential under plural transfer electrodes via an insulated film on a uni-conduction type semiconductor substrate. CONSTITUTION:A semiconductor substrate 1 of uni-conduction type is made of the P type silicon for instance. Two pairs of transfer electrodes 3a, 3b, 3c... and 4a, 4b, 4c... are arranged in parallel on the surface of the substrate 1 via an insulated film 2 composed of a silicon oxide. A channel preventing region 5 containing the P type impurities in a high concentration is provided to form two transfer channels 6A and 6B under the transfer electrodes. Then an arithmetic gate electrode 7 is provided as if it crossed the channels 6A and 6B. In such constitution, the types of operations can be freely selected to enhance both the general-purpose performance and the arithmetic function. |
