| 摘要 |
PURPOSE:To obtain a storage element with large capacity and fast operating seed, by providing an RAM, a circulating storage circuit, and a circuit mutually connecting both storage circuits on the same semiconductor chip. CONSTITUTION:On the same semiconductor chip, an RAM with faster operating speed is used as a buffer storage and combined with a circulating storage circuit such as a large capacity CCD. For example, one element of an RAM storage element matrix 4 is selected via a column address signal line 11, a column address decoder 9, a bit signal line 7, a row address signal line 10, a row address decoder 8, and a word line 6, the output is inputted to an RAM input/output control circuit 12 and a CCD input/output control circuit 13 via a bit line 5 and stored in a shift register 20. Further, readout or write operation is done according to the RAM operation mode via a transfer enable signal line 18, a chip enable signal line 16, and a write enable signal line 17, and data transfer is performed via a data input line 14 and a data output line 15. |
