发明名称 QUANTUM PHOTOTRANSISTOR
摘要 PROBLEM TO BE SOLVED: To provide a quantum phototransistor which has a simple structure and is highly integrated and has a high sensitivity and low power consumption, so that it causes an optical current to flow by a single carrier and has a rapid signal transmission speed and has a high amplification factor. SOLUTION: A conductive region 53 is formed by a quantum structure, in which a difference in the constraint energies of the holes or electrons, is formed between two electrodes 50 and 51. When a light or electromagnetic wave is applied on a partial depletion region of the electrons or holes generated in the quantum structure, pairs of the electrons and the holes are generated in the partial depletion region, canceling depleting in the region and then causing a current to flow therein. The quantum structure, such as a point contact, quantum fine line, and quantum dot, is such that a potential barrier formed from quantum effects of the conductive region, that is, from the constraint energy of one or zero dimension of electrons or holes is formed so that it can be controlled.
申请公布号 JP2002261318(A) 申请公布日期 2002.09.13
申请号 JP20010123442 申请日期 2001.04.20
申请人 JORYOKU KOORIA KK 发明人 KIM HOON
分类号 H01L29/06;H01L29/82;H01L31/0352;H01L31/06;H01L31/10;H01L31/11;(IPC1-7):H01L31/10 主分类号 H01L29/06
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