发明名称 |
a-C:H ISFET device, manufacturing method, and testing methods and apparatus thereof |
摘要 |
An a-C:H ISFET device and manufacturing method thereof. The present invention prepares a-C:H as the detection membrane of an ISFET by plasma enhanced low pressure chemical vapor deposition (PE-LPCVD) to obtain an a-C:H ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the a-C:H ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rates of the a-C:H ISFET for different pH and hysteresis width of the a-C:H ISFET for different pH loops are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the a-C:H ISFET.
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申请公布号 |
US2005040487(A1) |
申请公布日期 |
2005.02.24 |
申请号 |
US20040950579 |
申请日期 |
2004.09.28 |
申请人 |
NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY |
发明人 |
CHOU JUNG-CHUAN;TSAI HSUAN-MING |
分类号 |
G01N27/00;G01N27/414;G01R27/00;G01R31/02;H01L21/00;H01L21/04;H01L21/66;H01L23/58;H01L27/14;H01L29/772;H01L31/00;(IPC1-7):H01L27/14 |
主分类号 |
G01N27/00 |
代理机构 |
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主权项 |
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地址 |
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