发明名称 Chemical etch solution and technique for imaging a device's shallow junction profile
摘要 The present invention provides, in one aspect, a method of imaging a microelectronics device 100 . The method comprises cleaning, when contaminants are preset, a sample of a microelectronics device 100 to be imaged with a first solution comprising hydrofluoric acid, an inorganic acid and water, exposing the sample to a second solution comprising hydrofluoric acid, an inorganic acid and an organic acid, wherein the second solution forms a contrast between different regions within the sample, and producing an image of the contrasted sample.
申请公布号 US7262409(B2) 申请公布日期 2007.08.28
申请号 US20050028833 申请日期 2005.01.04
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 TSUNG LANCY Y.;ANCISO ADOLFO;MATHESON DOUG
分类号 H01L21/00 主分类号 H01L21/00
代理机构 代理人
主权项
地址