| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a measurement method for measuring a pattern such as a mask pattern to prevent contamination in a space where the mask pattern is to be disposed in a process of manufacturing a mask, an to provide a device for the method. <P>SOLUTION: Upon measuring a resist pattern 3 formed on a substrate 1 or a chromium film 2 with a charged particle beam, a fluorine gas such as HF, ClF3, NF3, SiF4, WF6 and XeF2 is introduced into a sample chamber to form a conductive fluorine compound film 4 on the surface of the pattern 3. The pattern 3 having the fluorine compound film 4 formed thereon is measured with a charged particle beam. <P>COPYRIGHT: (C)2008,JPO&INPIT |
