| 摘要 |
PROBLEM TO BE SOLVED: To provide a MOS transistor, where its CMOS-gate transit time is shortened as a short-channel type MOS transistor and its rising current is made rapid. SOLUTION: The manufacturing method of a MOS transistor comprises a step for providing in a semiconductor substrate a well having a dopant of a first conductive type, a step for providing an epitaxial layer on the surface of the doped well, a step for implanting into the epitaxial layer a dopant having a concentration lower than 1017/cm3, a step for providing in the epitaxial layer source/drain regions, having dopants of a second opposite conduction type to the first conduction type and a channel region, and a step for making the depths of the source/drain regions which is not larger than the thickness of the epitaxial layer. |
