Silicon semiconductor device and method - in which island region is defined by a mask and electrode zones and active regions are formed in a self-aligned manner

摘要

In the mfr. of a semiconductor device using self-aligned techniques, an oxidn. preventing layer (2) and a masking layer are successively formed on Si substrate (1). The masking layer comprises a layer of first material (3), edge (5) of which a layer of second material is formed which is selectively etchable with respect to the first material and the oxidn. preventing layer. After the exposed portion of the oxidn. preventing layer has been removed, insulation region (8) surrounding island region (9a) of the substrate is formed. When the edge portion (5) and the underlying oxidn. preventing layer are etched simultaneously, an electrode region (33) is defined and formed of poly Si (16). At least one zone of a semiconductor element is then formed in a self-aligned manner in island region (9a).