发明名称 Nondestructive readout-type ferroelectric memory device having twisted hysteresis
摘要 A first ferroelectric capacitor has a ferroelectric member having a film thickness and an area, and electrodes formed on both major surfaces of the member, respectively. Thus, the first ferroelectric capacitor has a polarization. A second ferroelectric capacitor has a ferroelectric member having a film thickness and an area, and electrodes formed on both major surfaces of the member, respectively. Thus, the second ferroelectric capacitor has a polarization. The first and second ferroelectric capacitors are connected parallel to each other, thereby forming a ferroelectric memory device. Since the ferroelectric memory device uses the synthesized hysteresis characteristics of the two ferroelectric capacitors of different coercive field values, it can use multi-value data, and perform nondestructive readout of data stored in the capacitors.
申请公布号 US5495438(A) 申请公布日期 1996.02.27
申请号 US19940328110 申请日期 1994.10.24
申请人 OLYMPUS OPTICAL CO., LTD.;SYMETRIX CORPORATION 发明人 OMURA, MASAYOSHI
分类号 G11C11/22;G11C11/56;H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):G11C11/22 主分类号 G11C11/22
代理机构 代理人
主权项
地址