发明名称 |
BASE POLYMER FOR RESIST COMPOSITION, RESIST MATERIAL AND METHOD FOR FORMING PATTERN |
摘要 |
PROBLEM TO BE SOLVED: To obtain a chemical amplification negative type resist material having a high cross-linking efficiency and a high sensitivity. SOLUTION: This base polymer for a chemical amplification negative type resist comprises a recurring unit represented by general formula (1) (wherein R1 is a 1-10C linear, branched or cyclic alkyl group in which the carbon atom directly bonded to the oxygen atom is primary or secondary; R2 is hydrogen atom or a 1-10C linear, branched or cyclic alkyl group; m and n are each 0<m<5; and 0<n<5). |
申请公布号 |
JP2001114825(A) |
申请公布日期 |
2001.04.24 |
申请号 |
JP19990298530 |
申请日期 |
1999.10.20 |
申请人 |
SHIN ETSU CHEM CO LTD |
发明人 |
HATAKEYAMA JUN;WATANABE ATSUSHI;WATANABE OSAMU;TAKEDA TAKANOBU;OSAWA YOICHI;KOBAYASHI TOMOHIRO |
分类号 |
H01L21/027;C08F8/00;C08F12/22;C08F297/02;C08L25/18;C08L53/00;G03F7/039 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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