发明名称 BASE POLYMER FOR RESIST COMPOSITION, RESIST MATERIAL AND METHOD FOR FORMING PATTERN
摘要 PROBLEM TO BE SOLVED: To obtain a chemical amplification negative type resist material having a high cross-linking efficiency and a high sensitivity. SOLUTION: This base polymer for a chemical amplification negative type resist comprises a recurring unit represented by general formula (1) (wherein R1 is a 1-10C linear, branched or cyclic alkyl group in which the carbon atom directly bonded to the oxygen atom is primary or secondary; R2 is hydrogen atom or a 1-10C linear, branched or cyclic alkyl group; m and n are each 0<m<5; and 0<n<5).
申请公布号 JP2001114825(A) 申请公布日期 2001.04.24
申请号 JP19990298530 申请日期 1999.10.20
申请人 SHIN ETSU CHEM CO LTD 发明人 HATAKEYAMA JUN;WATANABE ATSUSHI;WATANABE OSAMU;TAKEDA TAKANOBU;OSAWA YOICHI;KOBAYASHI TOMOHIRO
分类号 H01L21/027;C08F8/00;C08F12/22;C08F297/02;C08L25/18;C08L53/00;G03F7/039 主分类号 H01L21/027
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