| 摘要 |
<p>An insulated strain gage (23) including a layer of semiconductive material (33) and a layer of insulating material (32), where a side of the first insulating layer (32) is disposed adjacent to a side of the semiconductive layer (33). A method of manufacturing the insulated strain gage includes the steps of forming an insulating layer (32) of insulating material, and depositing a semiconductive layer of semiconductive material on top of the first insulating layer (32). The bottom side of the semiconductive layer (33) is adjacent to a top side of the insulating layer (32). The insulated strain gage may be part of an apparatus for measuring strain on an object. The apparatus measures the strain on an object by translating deformations of the object resulting from an applied force into electrical signals. The apparatus includes a sensor (2), an insulated strain gage (22, 23), and a circuit (50, 51). The insulated strain gage includes an insulating layer and is bonded to the mechanical sensor by an adhesive (21). The circuit (50, 51) is connected to the insulated strain gage and receives signals indicating an electrical value of the insulated strain gage.</p> |
