发明名称 |
Method and apparatus for improved planarity metallization by electroplating and CMP |
摘要 |
A pattern of in-laid conductors is formed by a method utilizing electroplating and chemical-mechanical polishing (CMP). Embodiments include a first step of selectively filling recesses formed in the surface of a substrate with a metal by localized electroplating at a reduced thickness, planar-surfaced overburden or blanket layer thereon, and planarizing the surface by CMP utilizing a relatively soft CMP pad. Embodiments also include an apparatus comprising a porous pad applicator for selectively electroplating recesses formed in the surface of a workpiece.
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申请公布号 |
US6319834(B1) |
申请公布日期 |
2001.11.20 |
申请号 |
US20000639812 |
申请日期 |
2000.08.17 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
ERB DARRELL M.;AVANZINO STEVEN C.;WANG FEI |
分类号 |
H01L21/288;H01L21/321;H01L21/768;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/288 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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