发明名称 Method and apparatus for improved planarity metallization by electroplating and CMP
摘要 A pattern of in-laid conductors is formed by a method utilizing electroplating and chemical-mechanical polishing (CMP). Embodiments include a first step of selectively filling recesses formed in the surface of a substrate with a metal by localized electroplating at a reduced thickness, planar-surfaced overburden or blanket layer thereon, and planarizing the surface by CMP utilizing a relatively soft CMP pad. Embodiments also include an apparatus comprising a porous pad applicator for selectively electroplating recesses formed in the surface of a workpiece.
申请公布号 US6319834(B1) 申请公布日期 2001.11.20
申请号 US20000639812 申请日期 2000.08.17
申请人 ADVANCED MICRO DEVICES, INC. 发明人 ERB DARRELL M.;AVANZINO STEVEN C.;WANG FEI
分类号 H01L21/288;H01L21/321;H01L21/768;(IPC1-7):H01L21/44 主分类号 H01L21/288
代理机构 代理人
主权项
地址