| 摘要 |
A semiconductor laser includes a p-type InP substrate and a ridge section of a p type InP first cladding layer, an AlGaInAs strained quantum well active layer and a n type InP second cladding layer, laminated one atop the other. On both sides of the ridge section, a current blocking layer including a p-type InP first burying layer, an n-type InP second burying layer, and a semi-insulating Fe-doped InP third burying layer are laminated, one atop the other. A top face of the third burying layer is covered with an n-type InP semiconductor layer. This structure suppresses leakage current on the top face of the third burying layer and improves reliability of the semiconductor laser.
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