发明名称 MASK BLANK PRODUCTION METHOD, TRANSFER MASK PRODUCTION METHOD, AND SEMICONDUCTOR DEVICE PRODUCTION METHOD
摘要 PROBLEM TO BE SOLVED: To provide a mask blank production method, and a transfer mask production method capable of suppressing deterioration of flatness.SOLUTION: The mask blank production method comprises the steps for: preparing a glass substrate whose main surface is mirror-polished; heat-treating the prepared glass substrate; and forming a thin film which is formed of a material containing tantalum, and not containing hydrogen substantially, on the main surface of the heat-treated glass substrate.SELECTED DRAWING: Figure 1
申请公布号 JP2016145993(A) 申请公布日期 2016.08.12
申请号 JP20160077882 申请日期 2016.04.08
申请人 HOYA CORP 发明人 NOZAWA JUN;KOMINATO ATSUSHI;SHISHIDO HIROAKI
分类号 G03F1/54;G03F1/50 主分类号 G03F1/54
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