发明名称 MONTE CARLO SIMULATION SYSTEM FOR SEMICONDUCTOR
摘要 PURPOSE:To accelerate computation, by finding the scattering probability of each particle so that a mean free stroke time including virtual scattering until that time can be set at maximum when a constant scattering probability is set at an infinity before the sum of the real scattering probability of each particle arrives at a constant value. CONSTITUTION:Assuming that the scattering probability until a time tX after the free stroke of one particle starts is set at a constant (gamma) and is set at the infinity after that time, it follows that the virtual scattering are performed on all of the particles for which no scattering are performed until the time tX. In such a case, assuming that a minimum time required for the arrival of the sum of the real scattering probability to the (gamma) is set as the time tX, the tX can be expressed as the function of the (gamma). And since the scattering of all particles are completed by the time tX, the free stroke time (t) to the scattering can be expressed in equation I setting the (gamma) as the random number 0-1. Now, when it is t>=tX, one free stroke can be handled by one (gamma). Also, the mean free stroke time of the (t) can be expressed in equation II setting the (gamma) as the scattering probability in the time (t). Then, the virtual scattering probability in all scattering can be minimized by finding the (gamma) corresponding to the state of each particle so as to maximize the mean free stroke time of the (t).
申请公布号 JPS641051(A) 申请公布日期 1989.01.05
申请号 JP19870155385 申请日期 1987.06.24
申请人 TOSHIBA CORP 发明人 KATO KOICHI
分类号 H01L21/66;G06F19/00 主分类号 H01L21/66
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