发明名称 Power semiconductor switching off method for switch protection - has discharge of switch capacitance before turn off only in overload conditions
摘要 In operation a control voltage turns on the power semiconductor switch, and holds it conductive; upon its disappearance or polarity inversion the switch is turned off and blocked. Only in the event of overcurrent is the control voltage, necessary for switch-on, reduced so that a partial discharge of the input capacitance of the switch takes place, before the switch is turned off. A switch (53) is operated in the event of overcurrent to apply a voltage from a divider (RG1, RG2, R3, D2) in order to discharge the gate capacitance. USE - Protection of DMOS or IGBT switches.
申请公布号 DE4012382(A1) 申请公布日期 1991.10.24
申请号 DE19904012382 申请日期 1990.04.18
申请人 LICENTIA PATENT-VERWALTUNGS-GMBH, 6000 FRANKFURT, DE 发明人 BROSCH, HARALD, DIPL.-ING., 6233 KELKHEIM, DE;JUNGE, GUENTER, DIPL.-ING.;TADROS, YEHIA, DR.-ING., 1000 BERLIN, DE
分类号 H03K17/082;H03K17/695 主分类号 H03K17/082
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